SL2309

SL2309 Shenzhen Slkormicro Semicon Co., Ltd.


SL2309%20SOT-23-3.PDF Hersteller: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 60V 1.6A 200M@4.5V 1.5W 2.6V@250
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 1.5A, 10V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 444.2 pF @ 30 V
auf Bestellung 2950 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
46+0.39 EUR
76+0.23 EUR
121+0.15 EUR
500+0.11 EUR
1000+0.094 EUR
Mindestbestellmenge: 46
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details SL2309 Shenzhen Slkormicro Semicon Co., Ltd.

Description: 60V 1.6A 200M@4.5V 1.5W 2.6V@250, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc), Rds On (Max) @ Id, Vgs: 160mOhm @ 1.5A, 10V, Power Dissipation (Max): 1.5W (Tc), Vgs(th) (Max) @ Id: 2.6V @ 250µA, Supplier Device Package: SOT-23, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 444.2 pF @ 30 V.

Weitere Produktangebote SL2309

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
SL2309 SL2309 Hersteller : Shenzhen Slkormicro Semicon Co., Ltd. SL2309%20SOT-23-3.PDF Description: 60V 1.6A 200M@4.5V 1.5W 2.6V@250
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 1.5A, 10V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 444.2 pF @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH