Produkte > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > SM8S30HE3/2D
SM8S30HE3/2D

SM8S30HE3/2D Vishay General Semiconductor - Diodes Division

sm8s.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 30VWM 53.5VC DO218AB
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-218AB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 6600W (6.6kW)
Voltage - Clamping (Max) @ Ipp: 53.5V
Voltage - Breakdown (Min): 33.3V
Unidirectional Channels: 1
Supplier Device Package: DO-218AB
Voltage - Reverse Standoff (Typ): 30V
Current - Peak Pulse (10/1000µs): 123A
Operating Temperature: -55°C ~ 175°C (TJ)
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Technische Details SM8S30HE3/2D Vishay General Semiconductor - Diodes Division

Description: TVS DIODE 30VWM 53.5VC DO218AB, Type: Zener, Mounting Type: Surface Mount, Package / Case: DO-218AB, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive, Power Line Protection: No, Power - Peak Pulse: 6600W (6.6kW), Voltage - Clamping (Max) @ Ipp: 53.5V, Voltage - Breakdown (Min): 33.3V, Unidirectional Channels: 1, Supplier Device Package: DO-218AB, Voltage - Reverse Standoff (Typ): 30V, Current - Peak Pulse (10/1000µs): 123A, Operating Temperature: -55°C ~ 175°C (TJ).