Produkte > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > SM8S33AHE3/2E
SM8S33AHE3/2E

SM8S33AHE3/2E Vishay General Semiconductor - Diodes Division

SM8S10_thru_SM8S43A._Aug.31%2C2016.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 33VWM 53.3VC DO218AB
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 6600W (6.6kW)
Voltage - Clamping (Max) @ Ipp: 53.3V
Voltage - Breakdown (Min): 36.7V
Unidirectional Channels: 1
Supplier Device Package: DO-218AB
Voltage - Reverse Standoff (Typ): 33V
Current - Peak Pulse (10/1000µs): 124A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-218AB
Packaging: Tape & Reel (TR)
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Technische Details SM8S33AHE3/2E Vishay General Semiconductor - Diodes Division

Description: TVS DIODE 33VWM 53.3VC DO218AB, Qualification: AEC-Q101, Grade: Automotive, Power Line Protection: No, Power - Peak Pulse: 6600W (6.6kW), Voltage - Clamping (Max) @ Ipp: 53.3V, Voltage - Breakdown (Min): 36.7V, Unidirectional Channels: 1, Supplier Device Package: DO-218AB, Voltage - Reverse Standoff (Typ): 33V, Current - Peak Pulse (10/1000µs): 124A, Operating Temperature: -55°C ~ 175°C (TJ), Type: Zener, Mounting Type: Surface Mount, Package / Case: DO-218AB, Packaging: Tape & Reel (TR).