Technische Details SMA5106 SANKEN
Description: MOSFET 4N-CH 100V 4A 12SIP, Packaging: Tube, Package / Case: 12-SIP, Mounting Type: Through Hole, Transistor Type: 4 NPN Darlington (Quad), Configuration: 4 N-Channel, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 4W (Ta), 28W (Tc), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 25V, Rds On (Max) @ Id, Vgs: 550mOhm @ 2A, 10V, Current - Collector (Ic) (Max): 5A, Voltage - Collector Emitter Breakdown (Max): 120V, Vce Saturation (Max) @ Ib, Ic: 1.5V @ 3mA, 3A, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 3A, 2V, Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: 12-SIP, Part Status: Active.
Weitere Produktangebote SMA5106
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
|
SMA5106 | Sanken Electric USA Inc. |
Description: MOSFET 4N-CH 100V 4A 12SIPPackaging: Tube Package / Case: 12-SIP Mounting Type: Through Hole Transistor Type: 4 NPN Darlington (Quad) Configuration: 4 N-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 4W (Ta), 28W (Tc) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 25V Rds On (Max) @ Id, Vgs: 550mOhm @ 2A, 10V Current - Collector (Ic) (Max): 5A Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 3mA, 3A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 3A, 2V Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 12-SIP Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SMA5106 |
![]() |
Hersteller: Sanken Electric USA Inc.
Description: MOSFET 4N-CH 100V 4A 12SIP
Packaging: Tube
Package / Case: 12-SIP
Mounting Type: Through Hole
Transistor Type: 4 NPN Darlington (Quad)
Configuration: 4 N-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4W (Ta), 28W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 25V
Rds On (Max) @ Id, Vgs: 550mOhm @ 2A, 10V
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 3mA, 3A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 3A, 2V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 12-SIP
Part Status: Active
Description: MOSFET 4N-CH 100V 4A 12SIP
Packaging: Tube
Package / Case: 12-SIP
Mounting Type: Through Hole
Transistor Type: 4 NPN Darlington (Quad)
Configuration: 4 N-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4W (Ta), 28W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 25V
Rds On (Max) @ Id, Vgs: 550mOhm @ 2A, 10V
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 3mA, 3A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 3A, 2V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 12-SIP
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH


