
auf Bestellung 9421 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
7+ | 0.44 EUR |
11+ | 0.27 EUR |
100+ | 0.22 EUR |
500+ | 0.21 EUR |
1000+ | 0.2 EUR |
3000+ | 0.19 EUR |
6000+ | 0.18 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SMMBFJ175LT1G onsemi
Description: JFET P-CH 30V SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), FET Type: P-Channel, Input Capacitance (Ciss) (Max) @ Vds: 11pF @ 10V (VGS), Voltage - Breakdown (V(BR)GSS): 30 V, Supplier Device Package: SOT-23-3 (TO-236), Part Status: Active, Power - Max: 225 mW, Resistance - RDS(On): 125 Ohms, Voltage - Cutoff (VGS off) @ Id: 3 V @ 10 nA, Current - Drain (Idss) @ Vds (Vgs=0): 7 mA @ 15 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote SMMBFJ175LT1G nach Preis ab 0.19 EUR bis 0.44 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
SMMBFJ175LT1G | Hersteller : onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) FET Type: P-Channel Input Capacitance (Ciss) (Max) @ Vds: 11pF @ 10V (VGS) Voltage - Breakdown (V(BR)GSS): 30 V Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Power - Max: 225 mW Resistance - RDS(On): 125 Ohms Voltage - Cutoff (VGS off) @ Id: 3 V @ 10 nA Current - Drain (Idss) @ Vds (Vgs=0): 7 mA @ 15 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 2241 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
![]() |
SMMBFJ175LT1G | Hersteller : ON Semiconductor |
![]() |
Produkt ist nicht verfügbar |
|||||||||||||||||
SMMBFJ175LT1G | Hersteller : ONSEMI |
![]() Description: Transistor: P-JFET; unipolar; -25V; -60mA; 225mW; SOT23 Mounting: SMD Case: SOT23 Drain-source voltage: -25V Drain current: -60mA On-state resistance: 125Ω Type of transistor: P-JFET Power dissipation: 0.225W Polarisation: unipolar Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||||
![]() |
SMMBFJ175LT1G | Hersteller : onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) FET Type: P-Channel Input Capacitance (Ciss) (Max) @ Vds: 11pF @ 10V (VGS) Voltage - Breakdown (V(BR)GSS): 30 V Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Power - Max: 225 mW Resistance - RDS(On): 125 Ohms Voltage - Cutoff (VGS off) @ Id: 3 V @ 10 nA Current - Drain (Idss) @ Vds (Vgs=0): 7 mA @ 15 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
|||||||||||||||||
SMMBFJ175LT1G | Hersteller : ONSEMI |
![]() Description: Transistor: P-JFET; unipolar; -25V; -60mA; 225mW; SOT23 Mounting: SMD Case: SOT23 Drain-source voltage: -25V Drain current: -60mA On-state resistance: 125Ω Type of transistor: P-JFET Power dissipation: 0.225W Polarisation: unipolar Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |