
SMMBFJ175LT1G onsemi

Description: JFET P-CH 30V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 11pF @ 10V (VGS)
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Power - Max: 225 mW
Resistance - RDS(On): 125 Ohms
Voltage - Cutoff (VGS off) @ Id: 3 V @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 7 mA @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2376 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
40+ | 0.44 EUR |
59+ | 0.30 EUR |
67+ | 0.27 EUR |
100+ | 0.23 EUR |
250+ | 0.21 EUR |
500+ | 0.20 EUR |
1000+ | 0.19 EUR |
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Technische Details SMMBFJ175LT1G onsemi
Description: JFET P-CH 30V SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), FET Type: P-Channel, Input Capacitance (Ciss) (Max) @ Vds: 11pF @ 10V (VGS), Voltage - Breakdown (V(BR)GSS): 30 V, Supplier Device Package: SOT-23-3 (TO-236), Part Status: Active, Power - Max: 225 mW, Resistance - RDS(On): 125 Ohms, Voltage - Cutoff (VGS off) @ Id: 3 V @ 10 nA, Current - Drain (Idss) @ Vds (Vgs=0): 7 mA @ 15 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote SMMBFJ175LT1G nach Preis ab 0.18 EUR bis 0.47 EUR
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SMMBFJ175LT1G | Hersteller : onsemi |
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auf Bestellung 9533 Stücke: Lieferzeit 10-14 Tag (e) |
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SMMBFJ175LT1G | Hersteller : ON Semiconductor |
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Produkt ist nicht verfügbar |
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SMMBFJ175LT1G | Hersteller : ONSEMI |
![]() Description: Transistor: P-JFET; unipolar; -25V; -60mA; 225mW; SOT23 Mounting: SMD Case: SOT23 Drain-source voltage: -25V Drain current: -60mA On-state resistance: 125Ω Type of transistor: P-JFET Power dissipation: 0.225W Polarisation: unipolar Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SMMBFJ175LT1G | Hersteller : onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) FET Type: P-Channel Input Capacitance (Ciss) (Max) @ Vds: 11pF @ 10V (VGS) Voltage - Breakdown (V(BR)GSS): 30 V Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Power - Max: 225 mW Resistance - RDS(On): 125 Ohms Voltage - Cutoff (VGS off) @ Id: 3 V @ 10 nA Current - Drain (Idss) @ Vds (Vgs=0): 7 mA @ 15 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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SMMBFJ175LT1G | Hersteller : ONSEMI |
![]() Description: Transistor: P-JFET; unipolar; -25V; -60mA; 225mW; SOT23 Mounting: SMD Case: SOT23 Drain-source voltage: -25V Drain current: -60mA On-state resistance: 125Ω Type of transistor: P-JFET Power dissipation: 0.225W Polarisation: unipolar Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |