| Anzahl | Preis |
|---|---|
| 9+ | 0.33 EUR |
| 14+ | 0.2 EUR |
| 100+ | 0.13 EUR |
| 500+ | 0.093 EUR |
| 1000+ | 0.072 EUR |
| 5000+ | 0.062 EUR |
| 10000+ | 0.056 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SMMBT5551LT3G onsemi
Description: TRANS NPN 160V 0.6A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA, Current - Collector Cutoff (Max): 100nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Supplier Device Package: SOT-23-3 (TO-236), Part Status: Active, Current - Collector (Ic) (Max): 600 mA, Voltage - Collector Emitter Breakdown (Max): 160 V, Power - Max: 225 mW.
Weitere Produktangebote SMMBT5551LT3G nach Preis ab 0.061 EUR bis 0.33 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SMMBT5551LT3G | onsemi |
 Description: TRANS NPN 160V 0.6A SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 160 V Power - Max: 225 mW |
auf Bestellung 9923 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
| SMMBT5551LT3G | ON Semiconductor |
|
auf Bestellung 7100 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SMMBT5551LT3G |
|
Hersteller: onsemi
Description: TRANS NPN 160V 0.6A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 225 mW
Description: TRANS NPN 160V 0.6A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 225 mW
auf Bestellung 9923 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 53+ | 0.33 EUR |
| 87+ | 0.2 EUR |
| 141+ | 0.13 EUR |
| 500+ | 0.091 EUR |
| 1000+ | 0.08 EUR |
| 2000+ | 0.071 EUR |
| 5000+ | 0.061 EUR |
| SMMBT5551LT3G |
|
Hersteller: ON Semiconductor
auf Bestellung 7100 Stücke:
Lieferzeit 21-28 Tag (e)