SMMUN2211LT1G ONSEMI
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
| Anzahl | Privatkunde |
|---|---|
| 625+ | 0.13 EUR |
| 1624+ | 0.052 EUR |
| 2263+ | 0.038 EUR |
| 2618+ | 0.032 EUR |
| 3290+ | 0.026 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SMMUN2211LT1G ONSEMI
Description: TRANS PREBIAS NPN 50V SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V, Supplier Device Package: SOT-23-3 (TO-236), Grade: Automotive, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 246 mW, Resistor - Base (R1): 10 kOhms, Resistor - Emitter Base (R2): 10 kOhms, Qualification: AEC-Q101, Resistors Included: R1 and R2.
Weitere Produktangebote SMMUN2211LT1G nach Preis ab 0.062 EUR bis 0.5 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||||||
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SMMUN2211LT1G | onsemi |
Digital Transistors SS SOT23 BR XSTR SPCL TR |
auf Bestellung 88878 Stücke: Lieferzeit 374-378 Tag (e) |
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SMMUN2211LT1G | onsemi |
Description: TRANS PREBIAS NPN 50V SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 246 mW Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms Grade: Automotive Qualification: AEC-Q101 Resistors Included: R1 and R2 |
auf Bestellung 5 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| SMMUN2211LT1G | ON Semiconductor |
Trans Digital BJT NPN 50V 100mA 400mW Automotive 3-Pin SOT-23 T/R |
auf Bestellung 29776 Stücke: Lieferzeit 14-21 Tag (e) |
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| SMMUN2211LT1G | ON Semiconductor |
|
auf Bestellung 5530 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SMMUN2211LT1G |
|
Hersteller: onsemi
Digital Transistors SS SOT23 BR XSTR SPCL TR
Digital Transistors SS SOT23 BR XSTR SPCL TR
auf Bestellung 88878 Stücke:
Lieferzeit 374-378 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 0.39 EUR |
| 15+ | 0.23 EUR |
| 100+ | 0.13 EUR |
| 500+ | 0.099 EUR |
| 1000+ | 0.086 EUR |
| 3000+ | 0.075 EUR |
| SMMUN2211LT1G |
|
Hersteller: onsemi
Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
| SMMUN2211LT1G |
|
Hersteller: ON Semiconductor
Trans Digital BJT NPN 50V 100mA 400mW Automotive 3-Pin SOT-23 T/R
Trans Digital BJT NPN 50V 100mA 400mW Automotive 3-Pin SOT-23 T/R
auf Bestellung 29776 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 351+ | 0.5 EUR |
| 486+ | 0.35 EUR |
| 520+ | 0.31 EUR |
| 949+ | 0.17 EUR |
| 1513+ | 0.1 EUR |
| 1527+ | 0.095 EUR |
| 1767+ | 0.079 EUR |
| 3000+ | 0.069 EUR |
| 6000+ | 0.062 EUR |
| SMMUN2211LT1G |
|
Hersteller: ON Semiconductor
auf Bestellung 5530 Stücke:
Lieferzeit 21-28 Tag (e)