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SMUN5112DW1T1G

SMUN5112DW1T1G onsemi

dta124ed-d.pdf
Hersteller: onsemi
Description: TRANS 2PNP PREBIAS 0.25W SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 78000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.09 EUR
6000+0.081 EUR
9000+0.076 EUR
15000+0.071 EUR
21000+0.068 EUR
30000+0.065 EUR
75000+0.058 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SMUN5112DW1T1G onsemi

Description: TRANS 2PNP PREBIAS 0.25W SOT363, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 2 PNP - Pre-Biased (Dual), Power - Max: 250mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V, Resistor - Base (R1): 22kOhms, Resistor - Emitter Base (R2): 22kOhms, Supplier Device Package: SC-88/SC70-6/SOT-363, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote SMUN5112DW1T1G nach Preis ab 0.084 EUR bis 0.5 EUR

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SMUN5112DW1T1G SMUN5112DW1T1G onsemi dta124ed-d.pdf Description: TRANS 2PNP PREBIAS 0.25W SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 78000 Stücke:
Lieferzeit 10-14 Tag (e)
40+0.44 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
SMUN5112DW1T1G onsemi dta124ed-d.pdf Digital Transistors SS SC88 BR XSTR PNP 50V
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
6+0.5 EUR
10+0.42 EUR
100+0.33 EUR
500+0.14 EUR
1000+0.12 EUR
3000+0.084 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
SMUN5112DW1T1G dta124ed-d.pdf
SMUN5112DW1T1G
Hersteller: onsemi
Description: TRANS 2PNP PREBIAS 0.25W SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 78000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
40+0.44 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
SMUN5112DW1T1G dta124ed-d.pdf
Hersteller: onsemi
Digital Transistors SS SC88 BR XSTR PNP 50V
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+0.5 EUR
10+0.42 EUR
100+0.33 EUR
500+0.14 EUR
1000+0.12 EUR
3000+0.084 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH