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SMUN5214DW1T1G onsemi


dtc114yd-d.pdf
Hersteller: onsemi
Description: TRANS 2NPN PREBIAS 0.187W SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 187mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.11 EUR
6000+0.1 EUR
9000+0.094 EUR
15000+0.088 EUR
21000+0.084 EUR
30000+0.081 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SMUN5214DW1T1G onsemi

Description: TRANS 2NPN PREBIAS 0.187W SOT363, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 2 NPN - Pre-Biased (Dual), Power - Max: 187mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V, Resistor - Base (R1): 10kOhms, Resistor - Emitter Base (R2): 47kOhms, Supplier Device Package: SC-88/SC70-6/SOT-363, Grade: Automotive, Part Status: Active, Qualification: AEC-Q101.

Weitere Produktangebote SMUN5214DW1T1G nach Preis ab 0.11 EUR bis 0.55 EUR

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SMUN5214DW1T1G SMUN5214DW1T1G ONSEMI dtc114yd-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 10kΩ; R2: 47kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
auf Bestellung 2987 Stücke:
Lieferzeit 14-21 Tag (e)
239+0.36 EUR
309+0.27 EUR
368+0.23 EUR
463+0.18 EUR
Mindestbestellmenge: 239 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SMUN5214DW1T1G SMUN5214DW1T1G onsemi dtc114yd-d.pdf Digital Transistors SS BR XSTR NPN 50V
auf Bestellung 1664 Stücke:
Lieferzeit 10-14 Tag (e)
7+0.52 EUR
11+0.32 EUR
100+0.2 EUR
500+0.14 EUR
1000+0.13 EUR
3000+0.11 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SMUN5214DW1T1G SMUN5214DW1T1G onsemi dtc114yd-d.pdf Description: TRANS 2NPN PREBIAS 0.187W SOT363
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 187mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: SC-88/SC70-6/SOT-363
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
auf Bestellung 30464 Stücke:
Lieferzeit 10-14 Tag (e)
39+0.55 EUR
64+0.33 EUR
102+0.2 EUR
500+0.15 EUR
1000+0.13 EUR
Mindestbestellmenge: 39 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SMUN5214DW1T1G dtc114yd-d.pdf
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 10kΩ; R2: 47kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
auf Bestellung 2987 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
239+0.36 EUR
309+0.27 EUR
368+0.23 EUR
463+0.18 EUR
Mindestbestellmenge: 239 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SMUN5214DW1T1G dtc114yd-d.pdf
Hersteller: onsemi
Digital Transistors SS BR XSTR NPN 50V
auf Bestellung 1664 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+0.52 EUR
11+0.32 EUR
100+0.2 EUR
500+0.14 EUR
1000+0.13 EUR
3000+0.11 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SMUN5214DW1T1G dtc114yd-d.pdf
Hersteller: onsemi
Description: TRANS 2NPN PREBIAS 0.187W SOT363
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 187mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: SC-88/SC70-6/SOT-363
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
auf Bestellung 30464 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
39+0.55 EUR
64+0.33 EUR
102+0.2 EUR
500+0.15 EUR
1000+0.13 EUR
Mindestbestellmenge: 39 Stücke
Im Einkaufswagen  Stück im Wert von  UAH