Produkte > ONSEMI > SMUN5313DW1T3G
SMUN5313DW1T3G

SMUN5313DW1T3G onsemi

dtc144ep-d.pdf Hersteller: onsemi
Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 187mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 10980000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.069 EUR
20000+0.063 EUR
30000+0.06 EUR
50000+0.056 EUR
70000+0.054 EUR
100000+0.052 EUR
250000+0.048 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details SMUN5313DW1T3G onsemi

Description: TRANS PREBIAS 1NPN 1PNP SOT-363, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Power - Max: 187mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V, Resistor - Base (R1): 47kOhms, Resistor - Emitter Base (R2): 47kOhms, Supplier Device Package: SC-88/SC70-6/SOT-363, Grade: Automotive, Part Status: Active, Qualification: AEC-Q101.

Weitere Produktangebote SMUN5313DW1T3G nach Preis ab 0.072 EUR bis 0.42 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
SMUN5313DW1T3G SMUN5313DW1T3G Hersteller : onsemi dtc144ep-d.pdf Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 187mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 10980000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
44+0.4 EUR
72+0.25 EUR
115+0.15 EUR
500+0.11 EUR
1000+0.1 EUR
2000+0.089 EUR
5000+0.077 EUR
Mindestbestellmenge: 44
Im Einkaufswagen  Stück im Wert von  UAH
SMUN5313DW1T3G Hersteller : onsemi DTC144EP-D.PDF Digital Transistors Complementary Bipolar Digital Transistor (BRT)
auf Bestellung 15726 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+0.42 EUR
12+0.25 EUR
100+0.16 EUR
500+0.12 EUR
1000+0.093 EUR
5000+0.081 EUR
10000+0.072 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
SMUN5313DW1T3G SMUN5313DW1T3G Hersteller : ON Semiconductor dtc144ep-d.pdf Trans Digital BJT NPN/PNP 50V 100mA 385mW Automotive 6-Pin SC-88 T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMUN5313DW1T3G SMUN5313DW1T3G Hersteller : ONSEMI dtc144ep-d.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.25W
Kind of transistor: BRT; complementary pair
Polarisation: bipolar
Collector-emitter voltage: 50V
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Application: automotive industry
Type of transistor: NPN / PNP
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH