SMUN5335DW1T1G ON Semiconductor
auf Bestellung 27000 Stücke:
Lieferzeit 14-21 Tag (e)
Produktrezensionen
Produktbewertung abgeben
Technische Details SMUN5335DW1T1G ON Semiconductor
Description: TRANS NPN/PNP PREBIAS SOT363, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Power - Max: 187mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V, Resistor - Base (R1): 2.2kOhms, Resistor - Emitter Base (R2): 47kOhms, Supplier Device Package: SC-88/SC70-6/SOT-363, Part Status: Active.
Weitere Produktangebote SMUN5335DW1T1G nach Preis ab 0.15 EUR bis 0.68 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SMUN5335DW1T1G | Hersteller : ONSEMI |
 SMUN5335DW1T1G Complementary transistors |
auf Bestellung 2475 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||||
| SMUN5335DW1T1G | Hersteller : onsemi |
Bipolar Transistors - Pre-Biased SS BR XSTR DUAL 50V |
auf Bestellung 29996 Stücke: Lieferzeit 339-343 Tag (e) |
|
|||||||||||||||||
 |
SMUN5335DW1T1G | Hersteller : onsemi |
Description: TRANS NPN/PNP PREBIAS SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 187mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 2.2kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active |
Produkt ist nicht verfügbar |
|||||||||||||||||
|
|
SMUN5335DW1T1G | Hersteller : onsemi |
Description: TRANS NPN/PNP PREBIAS SOT363 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 187mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 2.2kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active |
Produkt ist nicht verfügbar |