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SNSS35200MR6T1G

SNSS35200MR6T1G onsemi

NSS35200MR6-D.PDF Hersteller: onsemi
Description: TRANS PNP 35V 2A 6-TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 310mV @ 20mA, 2A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1.5A, 1.5V
Frequency - Transition: 100MHz
Supplier Device Package: 6-TSOP
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 35 V
Power - Max: 625 mW
auf Bestellung 1790 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.48 EUR
20+0.92 EUR
100+0.6 EUR
500+0.46 EUR
1000+0.42 EUR
Mindestbestellmenge: 12
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Technische Details SNSS35200MR6T1G onsemi

Description: TRANS PNP 35V 2A 6-TSOP, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Transistor Type: PNP, Vce Saturation (Max) @ Ib, Ic: 310mV @ 20mA, 2A, Current - Collector Cutoff (Max): 100nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1.5A, 1.5V, Frequency - Transition: 100MHz, Supplier Device Package: 6-TSOP, Current - Collector (Ic) (Max): 2 A, Voltage - Collector Emitter Breakdown (Max): 35 V, Power - Max: 625 mW.

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SNSS35200MR6T1G SNSS35200MR6T1G Hersteller : ONSEMI ONSMS36038-1.pdf?t.download=true&u=5oefqw Description: ONSEMI - SNSS35200MR6T1G - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
SNSS35200MR6T1G SNSS35200MR6T1G Hersteller : onsemi NSS35200MR6-D.PDF Description: TRANS PNP 35V 2A 6-TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 310mV @ 20mA, 2A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1.5A, 1.5V
Frequency - Transition: 100MHz
Supplier Device Package: 6-TSOP
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 35 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SNSS35200MR6T1G Hersteller : ON Semiconductor NSS35200MR6_D-2318605.pdf Bipolar Transistors - BJT SSP LOW VCES 30V NPN XTR
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH