SNXH100M65L4Q2F2P2G-N1 onsemi
Hersteller: onsemi
Description: IGBT MOD 650V 113A 226W 40-PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 225A
NTC Thermistor: Yes
Supplier Device Package: 40-PIM/Q2PACK (93x47)
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 113 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 226 W
Current - Collector Cutoff (Max): 300 µA
Input Capacitance (Cies) @ Vce: 14630 pF @ 20 V
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Technische Details SNXH100M65L4Q2F2P2G-N1 onsemi
Description: IGBT MOD 650V 113A 226W 40-PIM, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Three Level Inverter, Operating Temperature: 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 225A, NTC Thermistor: Yes, Supplier Device Package: 40-PIM/Q2PACK (93x47), IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 113 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Power - Max: 226 W, Current - Collector Cutoff (Max): 300 µA, Input Capacitance (Cies) @ Vce: 14630 pF @ 20 V.
Weitere Produktangebote SNXH100M65L4Q2F2P2G-N1 nach Preis ab 160.83 EUR bis 212.29 EUR
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SNXH100M65L4Q2F2P2G-N1 | Hersteller : onsemi |
IGBT Modules 11705 GEN-III 1100V Q2PACK |
auf Bestellung 33 Stücke: Lieferzeit 10-14 Tag (e) |
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