SP001150026 Infineon Technologies


INFN-S-A0001299463-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: IHW20N120 - DISCRETE IGBT WITH A
Power - Max: 288 W
Current - Collector Pulsed (Icm): 60 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 40 A
Part Status: Active
Gate Charge: 170 nC
Test Condition: 600V, 20A, 10Ohm, 15V
Switching Energy: -, 750µJ (off)
Td (on/off) @ 25°C: -/260ns
IGBT Type: Trench Field Stop
Supplier Device Package: PG-TO247-3-41
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 20A
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
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Technische Details SP001150026 Infineon Technologies

Description: IHW20N120 - DISCRETE IGBT WITH A, Power - Max: 288 W, Current - Collector Pulsed (Icm): 60 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 40 A, Part Status: Active, Gate Charge: 170 nC, Test Condition: 600V, 20A, 10Ohm, 15V, Switching Energy: -, 750µJ (off), Td (on/off) @ 25°C: -/260ns, IGBT Type: Trench Field Stop, Supplier Device Package: PG-TO247-3-41, Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 20A, Input Type: Standard, Operating Temperature: -40°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Bulk.