SP001150026 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: IHW20N120 - DISCRETE IGBT WITH A
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 20A
Supplier Device Package: PG-TO247-3-41
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: -/260ns
Switching Energy: -, 750µJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 170 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 288 W
auf Bestellung 240 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 156+ | 3.38 EUR |
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Technische Details SP001150026 Infineon Technologies
Description: IHW20N120 - DISCRETE IGBT WITH A, Packaging: Bulk, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 20A, Supplier Device Package: PG-TO247-3-41, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: -/260ns, Switching Energy: -, 750µJ (off), Test Condition: 600V, 20A, 10Ohm, 15V, Gate Charge: 170 nC, Part Status: Active, Current - Collector (Ic) (Max): 40 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 60 A, Power - Max: 288 W.