SP8K2HZGTB

SP8K2HZGTB ROHM Semiconductor


datasheet?p=SP8K2HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
Hersteller: ROHM Semiconductor
MOSFETs AECQ
auf Bestellung 3960 Stücke:

Lieferzeit 10-14 Tag (e)
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1+3.87 EUR
10+1.83 EUR
100+1.37 EUR
500+1.24 EUR
1000+1.15 EUR
2500+1.14 EUR
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Technische Details SP8K2HZGTB ROHM Semiconductor

Description: MOSFET 2N-CH 30V 6A 8SOP, Qualification: AEC-Q101, Grade: Automotive, Supplier Device Package: 8-SOP, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Gate Charge (Qg) (Max) @ Vgs: 10.1nC @ 5V, Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), Drain to Source Voltage (Vdss): 30V, Power - Max: 1.4W (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).

Weitere Produktangebote SP8K2HZGTB nach Preis ab 1.54 EUR bis 4.66 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
SP8K2HZGTB SP8K2HZGTB Hersteller : Rohm Semiconductor datasheet?p=SP8K2HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2N-CH 30V 6A 8SOP
Gate Charge (Qg) (Max) @ Vgs: 10.1nC @ 5V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.4W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
auf Bestellung 2390 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.66 EUR
10+3.02 EUR
100+2.08 EUR
500+1.67 EUR
1000+1.54 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
SP8K2HZGTB SP8K2HZGTB Hersteller : Rohm Semiconductor datasheet?p=SP8K2HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2N-CH 30V 6A 8SOP
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 10.1nC @ 5V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.4W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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Im Einkaufswagen  Stück im Wert von  UAH