SP8K31HZGTB Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 60V 3.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V
Rds On (Max) @ Id, Vgs: 120mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
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Technische Details SP8K31HZGTB Rohm Semiconductor
Description: ROHM - SP8K31HZGTB - Dual-MOSFET, n-Kanal, 60 V, 60 V, 3.5 A, 3.5 A, 0.085 ohm, tariffCode: 85412900, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: 3.5A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: AEC-Q101, Drain-Source-Spannung Vds, p-Kanal: 60V, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 3.5A, Drain-Source-Durchgangswiderstand, p-Kanal: 0.085ohm, Verlustleistung, p-Kanal: 2W, Drain-Source-Spannung Vds, n-Kanal: 60V, euEccn: NLR, Bauform - Transistor: SOP, Anzahl der Pins: 8Pin(s), Produktpalette: -, Drain-Source-Durchgangswiderstand, n-Kanal: 0.085ohm, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Verlustleistung, n-Kanal: 2W, Betriebstemperatur, max.: 150°C, SVHC: No SVHC (23-Jan-2024).
Weitere Produktangebote SP8K31HZGTB nach Preis ab 0.87 EUR bis 4.06 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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SP8K31HZGTB | Rohm Semiconductor |
Trans MOSFET N-CH 60V 3.5A 8-Pin SOP T/R Automotive AEC-Q101 |
auf Bestellung 2400 Stücke: Lieferzeit 14-21 Tag (e) |
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SP8K31HZGTB | ROHM |
Description: ROHM - SP8K31HZGTB - Dual-MOSFET, n-Kanal, 60 V, 60 V, 3.5 A, 3.5 A, 0.085 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 3.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drain-Source-Spannung Vds, p-Kanal: 60V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 3.5A Drain-Source-Durchgangswiderstand, p-Kanal: 0.085ohm Verlustleistung, p-Kanal: 2W Drain-Source-Spannung Vds, n-Kanal: 60V euEccn: NLR Bauform - Transistor: SOP Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.085ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 2W Betriebstemperatur, max.: 150°C SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 4970 Stücke: Lieferzeit 14-21 Tag (e) |
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SP8K31HZGTB | Rohm Semiconductor |
Trans MOSFET N-CH 60V 3.5A 8-Pin SOP T/R Automotive AEC-Q101 |
auf Bestellung 2450 Stücke: Lieferzeit 14-21 Tag (e) |
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SP8K31HZGTB | ROHM Semiconductor |
MOSFETs AECQ |
auf Bestellung 2421 Stücke: Lieferzeit 10-14 Tag (e) |
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SP8K31HZGTB | Rohm Semiconductor |
Description: MOSFET 2N-CH 60V 3.5A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V Rds On (Max) @ Id, Vgs: 120mOhm @ 3.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP |
auf Bestellung 4880 Stücke: Lieferzeit 10-14 Tag (e) |
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| SP8K31HZGTB |
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Hersteller: Rohm Semiconductor
Trans MOSFET N-CH 60V 3.5A 8-Pin SOP T/R Automotive AEC-Q101
Trans MOSFET N-CH 60V 3.5A 8-Pin SOP T/R Automotive AEC-Q101
auf Bestellung 2400 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 147+ | 1.2 EUR |
| 250+ | 1.13 EUR |
| 500+ | 1.07 EUR |
| 1000+ | 1.01 EUR |
| SP8K31HZGTB |
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Hersteller: ROHM
Description: ROHM - SP8K31HZGTB - Dual-MOSFET, n-Kanal, 60 V, 60 V, 3.5 A, 3.5 A, 0.085 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 3.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
Drain-Source-Spannung Vds, p-Kanal: 60V
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 3.5A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.085ohm
Verlustleistung, p-Kanal: 2W
Drain-Source-Spannung Vds, n-Kanal: 60V
euEccn: NLR
Bauform - Transistor: SOP
Anzahl der Pins: 8Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.085ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 2W
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (23-Jan-2024)
Description: ROHM - SP8K31HZGTB - Dual-MOSFET, n-Kanal, 60 V, 60 V, 3.5 A, 3.5 A, 0.085 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 3.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
Drain-Source-Spannung Vds, p-Kanal: 60V
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 3.5A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.085ohm
Verlustleistung, p-Kanal: 2W
Drain-Source-Spannung Vds, n-Kanal: 60V
euEccn: NLR
Bauform - Transistor: SOP
Anzahl der Pins: 8Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.085ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 2W
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 4970 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 122+ | 2.05 EUR |
| 163+ | 1.43 EUR |
| 242+ | 0.89 EUR |
| 500+ | 0.88 EUR |
| 1000+ | 0.87 EUR |
| SP8K31HZGTB |
|
Hersteller: Rohm Semiconductor
Trans MOSFET N-CH 60V 3.5A 8-Pin SOP T/R Automotive AEC-Q101
Trans MOSFET N-CH 60V 3.5A 8-Pin SOP T/R Automotive AEC-Q101
auf Bestellung 2450 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 93+ | 3.56 EUR |
| 100+ | 2.24 EUR |
| 200+ | 1.84 EUR |
| 500+ | 1.43 EUR |
| 1000+ | 1.38 EUR |
| SP8K31HZGTB |
|
Hersteller: ROHM Semiconductor
MOSFETs AECQ
MOSFETs AECQ
auf Bestellung 2421 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.92 EUR |
| 10+ | 2.51 EUR |
| 100+ | 1.68 EUR |
| 500+ | 1.34 EUR |
| 1000+ | 1.23 EUR |
| 2500+ | 1.12 EUR |
| SP8K31HZGTB |
|
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 60V 3.5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V
Rds On (Max) @ Id, Vgs: 120mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Description: MOSFET 2N-CH 60V 3.5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V
Rds On (Max) @ Id, Vgs: 120mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
auf Bestellung 4880 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 4.06 EUR |
| 10+ | 2.59 EUR |
| 100+ | 1.76 EUR |
| 500+ | 1.39 EUR |
| 1000+ | 1.29 EUR |