SP8K32HZGTB Rohm Semiconductor
auf Bestellung 802 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 171+ | 0.91 EUR |
| 186+ | 0.81 EUR |
| 200+ | 0.76 EUR |
| 500+ | 0.73 EUR |
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Technische Details SP8K32HZGTB Rohm Semiconductor
Description: ROHM - SP8K32HZGTB - Dual-MOSFET, n-Kanal, 60 V, 60 V, 4.5 A, 4.5 A, 0.046 ohm, tariffCode: 85412900, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: 4.5A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: AEC-Q101, Drain-Source-Spannung Vds, p-Kanal: 60V, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 4.5A, Drain-Source-Durchgangswiderstand, p-Kanal: 0.046ohm, Verlustleistung, p-Kanal: 2W, Drain-Source-Spannung Vds, n-Kanal: 60V, euEccn: NLR, Bauform - Transistor: SOP, Anzahl der Pins: 8Pin(s), Produktpalette: -, Drain-Source-Durchgangswiderstand, n-Kanal: 0.046ohm, productTraceability: No, Kanaltyp: n-Kanal, Verlustleistung, n-Kanal: 2W, Betriebstemperatur, max.: 150°C, SVHC: No SVHC (17-Jan-2023).
Weitere Produktangebote SP8K32HZGTB nach Preis ab 0.57 EUR bis 2.71 EUR
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SP8K32HZGTB | Hersteller : ROHM SEMICONDUCTOR |
 Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 60V; 4.5A; Idm: 18A; 2W; SOP8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 4.5A Pulsed drain current: 18A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 77mΩ Mounting: SMD Gate charge: 7nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2490 Stücke: Lieferzeit 7-14 Tag (e) |
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SP8K32HZGTB | Hersteller : ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 4.5A; Idm: 18A; 2W; SOP8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 4.5A Pulsed drain current: 18A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 77mΩ Mounting: SMD Gate charge: 7nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
auf Bestellung 2490 Stücke: Lieferzeit 14-21 Tag (e) |
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SP8K32HZGTB | Hersteller : Rohm Semiconductor |
Trans MOSFET N-CH 60V 4.5A Automotive AEC-Q101 8-Pin SOP T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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SP8K32HZGTB | Hersteller : Rohm Semiconductor |
Description: MOSFET 2N-CH 60V 4.5A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V Rds On (Max) @ Id, Vgs: 65mOhm @ 4.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP |
auf Bestellung 2250 Stücke: Lieferzeit 10-14 Tag (e) |
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SP8K32HZGTB | Hersteller : ROHM Semiconductor |
MOSFET AECQ |
auf Bestellung 4997 Stücke: Lieferzeit 10-14 Tag (e) |
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SP8K32HZGTB | Hersteller : ROHM |
Description: ROHM - SP8K32HZGTB - Dual-MOSFET, n-Kanal, 60 V, 60 V, 4.5 A, 4.5 A, 0.046 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 4.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drain-Source-Spannung Vds, p-Kanal: 60V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 4.5A Drain-Source-Durchgangswiderstand, p-Kanal: 0.046ohm Verlustleistung, p-Kanal: 2W Drain-Source-Spannung Vds, n-Kanal: 60V euEccn: NLR Bauform - Transistor: SOP Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.046ohm productTraceability: No Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 2W Betriebstemperatur, max.: 150°C SVHC: No SVHC (17-Jan-2023) |
auf Bestellung 4074 Stücke: Lieferzeit 14-21 Tag (e) |
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SP8K32HZGTB | Hersteller : Rohm Semiconductor |
Description: MOSFET 2N-CH 60V 4.5A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V Rds On (Max) @ Id, Vgs: 65mOhm @ 4.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP |
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