SP8K4FU6TB
Hersteller: auf Bestellung 200 Stücke:
Lieferzeit 21-28 Tag (e)
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Technische Details SP8K4FU6TB
Description: MOSFET 2N-CH 30V 9A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 9A, Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V, Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V, Gate Charge (Qg) (Max) @ Vgs: 21nC @ 5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-SOP.
Weitere Produktangebote SP8K4FU6TB
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SP8K4FU6TB | Hersteller : Rohm Semiconductor |
Description: MOSFET 2N-CH 30V 9A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V Gate Charge (Qg) (Max) @ Vgs: 21nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP |
Produkt ist nicht verfügbar |
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SP8K4FU6TB | Hersteller : ROHM Semiconductor |
MOSFETs 30V 9A N-CHAN DUAL |
Produkt ist nicht verfügbar |