SP8K52FRATB Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: MOSFET 2N-CH 100V 3A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V
Rds On (Max) @ Id, Vgs: 170mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2460 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 11+ | 2.44 EUR |
| 14+ | 2 EUR |
| 100+ | 1.55 EUR |
| 500+ | 1.32 EUR |
| 1000+ | 1.07 EUR |
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Technische Details SP8K52FRATB Rohm Semiconductor
Description: ROHM - SP8K52FRATB - Dual-MOSFET, n-Kanal, 100 V, 100 V, 3 A, 3 A, 0.12 ohm, tariffCode: 85412900, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: 3A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: AEC-Q101, Drain-Source-Spannung Vds, p-Kanal: 100V, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 3A, Drain-Source-Durchgangswiderstand, p-Kanal: 0.12ohm, Verlustleistung, p-Kanal: 2W, Drain-Source-Spannung Vds, n-Kanal: 100V, euEccn: NLR, Bauform - Transistor: SOP, Anzahl der Pins: 8Pin(s), Produktpalette: -, Drain-Source-Durchgangswiderstand, n-Kanal: 0.12ohm, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Verlustleistung, n-Kanal: 2W, Betriebstemperatur, max.: 150°C.
Weitere Produktangebote SP8K52FRATB nach Preis ab 1.01 EUR bis 2.59 EUR
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SP8K52FRATB | Hersteller : ROHM Semiconductor |
MOSFET Nch+Nch 100V Vds 3A 0.135Rds(on) 8.5Qg |
auf Bestellung 2142 Stücke: Lieferzeit 14-28 Tag (e) |
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SP8K52FRATB | Hersteller : ROHM |
Description: ROHM - SP8K52FRATB - Dual-MOSFET, n-Kanal, 100 V, 100 V, 3 A, 3 A, 0.12 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 3A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drain-Source-Spannung Vds, p-Kanal: 100V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 3A Drain-Source-Durchgangswiderstand, p-Kanal: 0.12ohm Verlustleistung, p-Kanal: 2W Drain-Source-Spannung Vds, n-Kanal: 100V euEccn: NLR Bauform - Transistor: SOP Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.12ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 2W Betriebstemperatur, max.: 150°C |
auf Bestellung 2260 Stücke: Lieferzeit 14-21 Tag (e) |
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SP8K52FRATB | Hersteller : ROHM |
Description: ROHM - SP8K52FRATB - Dual-MOSFET, n-Kanal, 100 V, 100 V, 3 A, 3 A, 0.12 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 3A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drain-Source-Spannung Vds, p-Kanal: 100V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 3A Drain-Source-Durchgangswiderstand, p-Kanal: 0.12ohm Verlustleistung, p-Kanal: 2W Drain-Source-Spannung Vds, n-Kanal: 100V euEccn: NLR Bauform - Transistor: SOP Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.12ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 2W Betriebstemperatur, max.: 150°C |
auf Bestellung 2260 Stücke: Lieferzeit 14-21 Tag (e) |
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SP8K52FRATB | Hersteller : ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 100V; 3A; Idm: 12A; 2W; SOP8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 3A Pulsed drain current: 12A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 8.5nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SP8K52FRATB | Hersteller : Rohm Semiconductor |
Description: MOSFET 2N-CH 100V 3A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V Rds On (Max) @ Id, Vgs: 170mOhm @ 3A, 10V Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Part Status: Not For New Designs Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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SP8K52FRATB | Hersteller : ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 100V; 3A; Idm: 12A; 2W; SOP8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 3A Pulsed drain current: 12A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 8.5nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |