SP8M10FRATB Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 30V 7A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 4.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V, 850pF @ 10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V, 56mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 5V, 8.5nC @ 5V
FET Feature: Logic Level Gate, 4V Drive
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Grade: Automotive
Part Status: Not For New Designs
Qualification: AEC-Q101
| Anzahl | Preis |
|---|---|
| 6+ | 3.4 EUR |
| 10+ | 2.19 EUR |
| 100+ | 1.49 EUR |
| 500+ | 1.19 EUR |
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Technische Details SP8M10FRATB Rohm Semiconductor
Description: MOSFET N/P-CH 30V 7A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), Power - Max: 2W (Ta), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 4.5A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V, 850pF @ 10V, Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V, 56mOhm @ 4.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 5V, 8.5nC @ 5V, FET Feature: Logic Level Gate, 4V Drive, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-SOP, Grade: Automotive, Part Status: Not For New Designs, Qualification: AEC-Q101.
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SP8M10FRATB | Hersteller : Rohm Semiconductor |
Description: MOSFET N/P-CH 30V 7A 8SOPPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 4.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V, 850pF @ 10V Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V, 56mOhm @ 4.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 5V, 8.5nC @ 5V FET Feature: Logic Level Gate, 4V Drive Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Grade: Automotive Part Status: Not For New Designs Qualification: AEC-Q101 |
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SP8M10FRATB | Hersteller : ROHM Semiconductor |
MOSFETs 4V Drive Nch+Pch MOSFET (AEC-Q101 Qualified) |
Produkt ist nicht verfügbar |