SP8M10FRATB Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: 4V DRIVE NCH+PCH MOSFET (AEC-Q10
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 4.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V, 850pF @ 10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V, 56mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 5V, 8.5nC @ 5V
FET Feature: Logic Level Gate, 4V Drive
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
auf Bestellung 1193 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 6+ | 2.99 EUR |
| 100+ | 2.61 EUR |
| 500+ | 2.16 EUR |
| 1000+ | 1.7 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SP8M10FRATB Rohm Semiconductor
Description: ROHM - SP8M10FRATB - Dual-MOSFET, Komplementärer n- und p-Kanal, 30 V, 30 V, 7 A, 7 A, 0.017 ohm, tariffCode: 85412900, Drain-Source-Spannung Vds: 30V, rohsCompliant: YES, Dauer-Drainstrom Id: 7A, Dauer-Drainstrom Id, p-Kanal: 7A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: AEC-Q101, Drain-Source-Spannung Vds, p-Kanal: 30V, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 7A, Drain-Source-Durchgangswiderstand, p-Kanal: 0.017ohm, Verlustleistung, p-Kanal: 2W, euEccn: NLR, Bauform - Transistor: SOP, Anzahl der Pins: 8Pin(s), Produktpalette: -, Drain-Source-Durchgangswiderstand, n-Kanal: 0.017ohm, productTraceability: Yes-Date/Lot Code, Kanaltyp: Komplementärer n- und p-Kanal, Verlustleistung, n-Kanal: 2W, Betriebstemperatur, max.: 150°C, SVHC: No SVHC (17-Jan-2023).
Weitere Produktangebote SP8M10FRATB
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
 |
SP8M10FRATB | Hersteller : ROHM |
Description: ROHM - SP8M10FRATB - Dual-MOSFET, Komplementärer n- und p-Kanal, 30 V, 30 V, 7 A, 7 A, 0.017 ohm tariffCode: 85412900 Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 7A Dauer-Drainstrom Id, p-Kanal: 7A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drain-Source-Spannung Vds, p-Kanal: 30V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 7A Drain-Source-Durchgangswiderstand, p-Kanal: 0.017ohm Verlustleistung, p-Kanal: 2W euEccn: NLR Bauform - Transistor: SOP Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.017ohm productTraceability: Yes-Date/Lot Code Kanaltyp: Komplementärer n- und p-Kanal Verlustleistung, n-Kanal: 2W Betriebstemperatur, max.: 150°C SVHC: No SVHC (17-Jan-2023) |
auf Bestellung 2380 Stücke: Lieferzeit 14-21 Tag (e) |
|
|
|
SP8M10FRATB | Hersteller : ROHM |
Description: ROHM - SP8M10FRATB - Dual-MOSFET, Komplementärer n- und p-Kanal, 30 V, 30 V, 7 A, 7 A, 0.017 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 7A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drain-Source-Spannung Vds, p-Kanal: 30V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 7A Drain-Source-Durchgangswiderstand, p-Kanal: 0.017ohm Verlustleistung, p-Kanal: 2W euEccn: NLR Drain-Source-Durchgangswiderstand, n-Kanal: 0.017ohm productTraceability: Yes-Date/Lot Code Kanaltyp: Komplementärer n- und p-Kanal Verlustleistung, n-Kanal: 2W SVHC: No SVHC (17-Jan-2023) |
auf Bestellung 2380 Stücke: Lieferzeit 14-21 Tag (e) |
|
 |
SP8M10FRATB | Hersteller : ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 7/-4.5A; Idm: 18÷28A; 2W Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 7/-4.5A Pulsed drain current: 18...28A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 37/90mΩ Mounting: SMD Gate charge: 8.4/8.5nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|
|
|
SP8M10FRATB | Hersteller : Rohm Semiconductor |
Description: 4V DRIVE NCH+PCH MOSFET (AEC-Q10 Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 4.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V, 850pF @ 10V Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V, 56mOhm @ 4.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 5V, 8.5nC @ 5V FET Feature: Logic Level Gate, 4V Drive Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Part Status: Not For New Designs |
Produkt ist nicht verfügbar |
|
 |
SP8M10FRATB | Hersteller : ROHM Semiconductor |
MOSFET 4V Drive Nch+Pch MOSFET (AEC-Q101 Qualified) - SP8M10FRA. Complex type MOSFETs(P+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power typ |
Produkt ist nicht verfügbar |
|
|
|
SP8M10FRATB | Hersteller : ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 7/-4.5A; Idm: 18÷28A; 2W Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 7/-4.5A Pulsed drain current: 18...28A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 37/90mΩ Mounting: SMD Gate charge: 8.4/8.5nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |