
SP8M21FRATB ROHM Semiconductor
auf Bestellung 1511 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
2+ | 1.41 EUR |
10+ | 1.4 EUR |
2500+ | 1.2 EUR |
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Technische Details SP8M21FRATB ROHM Semiconductor
Description: MOSFET N/P-CH 45V 6A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), Power - Max: 2W, Drain to Source Voltage (Vdss): 45V, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 4A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V, 2400pF @ 10V, Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V, 46mOhm @ 4A, 10V, Gate Charge (Qg) (Max) @ Vgs: 21.6nC @ 5V, 28nC @ 5V, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-SOP, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote SP8M21FRATB
Foto | Bezeichnung | Hersteller | Beschreibung |
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SP8M21FRATB | Hersteller : ROHM SEMICONDUCTOR |
![]() Description: Transistor: N/P-MOSFET; unipolar; 45/-45V; 6/-4A; Idm: 16÷24A; 2W Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 45/-45V Drain current: 6/-4A Pulsed drain current: 16...24A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 37/65mΩ Mounting: SMD Gate charge: 15.4/20nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 2500 Stücke |
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SP8M21FRATB | Hersteller : Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 45V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 4A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V, 2400pF @ 10V Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V, 46mOhm @ 4A, 10V Gate Charge (Qg) (Max) @ Vgs: 21.6nC @ 5V, 28nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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SP8M21FRATB | Hersteller : Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 45V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 4A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V, 2400pF @ 10V Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V, 46mOhm @ 4A, 10V Gate Charge (Qg) (Max) @ Vgs: 21.6nC @ 5V, 28nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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SP8M21FRATB | Hersteller : ROHM SEMICONDUCTOR |
![]() Description: Transistor: N/P-MOSFET; unipolar; 45/-45V; 6/-4A; Idm: 16÷24A; 2W Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 45/-45V Drain current: 6/-4A Pulsed drain current: 16...24A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 37/65mΩ Mounting: SMD Gate charge: 15.4/20nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |