SP8M8FD5-TB1
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auf Bestellung 9900 Stücke:
Lieferzeit 21-28 Tag (e)
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Technische Details SP8M8FD5-TB1
Description: MOSFET N/P-CH 30V 6A/4.5A 8SOP, Supplier Device Package: 8-SOP, Vgs(th) (Max) @ Id: 2.5V @ 1mA, FET Feature: Logic Level Gate, 4V Drive, Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 5V, 8.5nC @ 5V, Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V, 56mOhm @ 4.5A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V, 850pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 4.5A (Ta), Drain to Source Voltage (Vdss): 30V, Power - Max: 2W (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Configuration: N and P-Channel, Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Weitere Produktangebote SP8M8FD5-TB1
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SP8M8FD5TB1 | Hersteller : Rohm Semiconductor |
Description: MOSFET N/P-CH 30V 6A/4.5A 8SOP Supplier Device Package: 8-SOP Vgs(th) (Max) @ Id: 2.5V @ 1mA FET Feature: Logic Level Gate, 4V Drive Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 5V, 8.5nC @ 5V Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V, 56mOhm @ 4.5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V, 850pF @ 10V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 4.5A (Ta) Drain to Source Voltage (Vdss): 30V Power - Max: 2W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
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