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SP8M8FD5-TB1



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Technische Details SP8M8FD5-TB1

Description: MOSFET N/P-CH 30V 6A/4.5A 8SOP, Supplier Device Package: 8-SOP, Vgs(th) (Max) @ Id: 2.5V @ 1mA, FET Feature: Logic Level Gate, 4V Drive, Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 5V, 8.5nC @ 5V, Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V, 56mOhm @ 4.5A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V, 850pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 4.5A (Ta), Drain to Source Voltage (Vdss): 30V, Power - Max: 2W (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Configuration: N and P-Channel, Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).

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SP8M8FD5TB1 SP8M8FD5TB1 Hersteller : Rohm Semiconductor Description: MOSFET N/P-CH 30V 6A/4.5A 8SOP
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
FET Feature: Logic Level Gate, 4V Drive
Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 5V, 8.5nC @ 5V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V, 56mOhm @ 4.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V, 850pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 4.5A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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Im Einkaufswagen  Stück im Wert von  UAH