SP8M8FD5-TB1
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auf Bestellung 9900 Stücke:
Lieferzeit 21-28 Tag (e)
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Technische Details SP8M8FD5-TB1
Description: MOSFET N/P-CH 30V 6A/4.5A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), Power - Max: 2W (Ta), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 4.5A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V, 850pF @ 10V, Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V, 56mOhm @ 4.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 5V, 8.5nC @ 5V, FET Feature: Logic Level Gate, 4V Drive, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-SOP.
Weitere Produktangebote SP8M8FD5-TB1
Foto | Bezeichnung | Hersteller | Beschreibung |
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SP8M8FD5TB1 | Hersteller : Rohm Semiconductor |
Description: MOSFET N/P-CH 30V 6A/4.5A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 4.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V, 850pF @ 10V Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V, 56mOhm @ 4.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 5V, 8.5nC @ 5V FET Feature: Logic Level Gate, 4V Drive Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP |
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