SP8M9TB Rohm Semiconductor

Description: MOSFET N/P-CH 30V 9A/5A 8SOP, Power - Max: 2W, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Configuration: N and P-Channel, Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR), Supplier Device Package: 8-SOP, Vgs(th) (Max) @ Id: 2.5V @ 1mA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 21nC @ 5V, Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 9A, 5A, Drain to Source Voltage (Vdss): 30V.