SPA11N65C3XK Infineon Technologies

Description: SPA11N65 - 650V AND 700V COOLMOS, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: PG-TO220-3-111, Vgs(th) (Max) @ Id: 3.9V @ 500µA, Power Dissipation (Max): 33W (Tc), Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), FET Type: N-Channel, Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Bulk.