SPA16N50C3 Infineon Technologies
| Anzahl | Privatkunde |
|---|---|
| 1+ | 7.02 EUR |
| 10+ | 6.28 EUR |
| 25+ | 5.53 EUR |
| 100+ | 5.15 EUR |
| 250+ | 4.77 EUR |
| 500+ | 3.64 EUR |
| 1000+ | 3.12 EUR |
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Technische Details SPA16N50C3 Infineon Technologies
Description: SPA16N50 - 500V COOLMOS N-CHANNE, Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: PG-TO220-3-111, Vgs(th) (Max) @ Id: 3.9V @ 675µA, Power Dissipation (Max): 34W (Tc), Rds On (Max) @ Id, Vgs: 280mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Bulk, Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V, Drain to Source Voltage (Vdss): 500 V.
Weitere Produktangebote SPA16N50C3
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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SPA16N50C3 | Infineon Technologies |
 Description: SPA16N50 - 500V COOLMOS N-CHANNEInput Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TO220-3-111 Vgs(th) (Max) @ Id: 3.9V @ 675µA Power Dissipation (Max): 34W (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Bulk Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Drain to Source Voltage (Vdss): 500 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SPA16N50C3 |
|
Hersteller: Infineon Technologies
Description: SPA16N50 - 500V COOLMOS N-CHANNE
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-3-111
Vgs(th) (Max) @ Id: 3.9V @ 675µA
Power Dissipation (Max): 34W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Description: SPA16N50 - 500V COOLMOS N-CHANNE
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-3-111
Vgs(th) (Max) @ Id: 3.9V @ 675µA
Power Dissipation (Max): 34W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH