SPA20N60C3

SPA20N60C3 INFINEON TECHNOLOGIES


pVersion=0046&contRep=ZT&docId=E1C058D08A5F9CF1A6F5005056AB5A8F&compId=spp20n60c3.pdf?ci_sign=e6782b5ab7a5620fbda75de79daa9ea3abc07fdf Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.1A; 34.5W; PG-TO220-3-FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.1A
Power dissipation: 34.5W
Case: PG-TO220-3-FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 14 Stücke:

Lieferzeit 7-14 Tag (e)
Anzahl Preis
13+5.71 EUR
14+5.11 EUR
25+3.52 EUR
50+3.49 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SPA20N60C3 INFINEON TECHNOLOGIES

Description: MOSFET N-CH 600V 20.7A TO220-111, Packaging: Bulk, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 13.1A, 10V, Power Dissipation (Max): 34.5W (Tc), Vgs(th) (Max) @ Id: 3.9V @ 1mA, Supplier Device Package: PG-TO220-3-111, Part Status: Active, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V.

Weitere Produktangebote SPA20N60C3 nach Preis ab 2.99 EUR bis 7.78 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
SPA20N60C3 SPA20N60C3 Hersteller : INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C058D08A5F9CF1A6F5005056AB5A8F&compId=spp20n60c3.pdf?ci_sign=e6782b5ab7a5620fbda75de79daa9ea3abc07fdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.1A; 34.5W; PG-TO220-3-FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.1A
Power dissipation: 34.5W
Case: PG-TO220-3-FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.71 EUR
14+5.11 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
SPA20N60C3 SPA20N60C3 Hersteller : Infineon Technologies Infineon_SPA20N60C3_DS_v03_02_EN-3363953.pdf MOSFETs N-Ch 600V 20.7A TO220FP-3 CoolMOS C3
auf Bestellung 524 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+7.78 EUR
10+7.48 EUR
25+4.03 EUR
100+3.66 EUR
500+3.48 EUR
1000+2.99 EUR
Im Einkaufswagen  Stück im Wert von  UAH
SPA20N60C3
Produktcode: 107978
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INFN-S-A0004583378-1.pdf?t.download=true&u=5oefqw Transistoren > MOSFET N-CH
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SPA20N60C3 SPA20N60C3 Hersteller : Infineon Technologies INFN-S-A0004583378-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 600V 20.7A TO220-111
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 13.1A, 10V
Power Dissipation (Max): 34.5W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO220-3-111
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH