Weitere Produktangebote SPA20N60C3 nach Preis ab 2.66 EUR bis 7.06 EUR
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SPA20N60C3 | Hersteller : INFINEON TECHNOLOGIES |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 13.1A; 34.5W; PG-TO220-3-FP Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 13.1A Power dissipation: 34.5W Case: PG-TO220-3-FP Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 44 Stücke: Lieferzeit 14-21 Tag (e) |
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SPA20N60C3 | Hersteller : Infineon Technologies |
MOSFETs N-Ch 600V 20.7A TO220FP-3 CoolMOS C3 |
auf Bestellung 609 Stücke: Lieferzeit 10-14 Tag (e) |
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| SPA20N60C3 | Hersteller : Infineon |
TO220 Група товару: Транзистори Од. вим: шт |
Produkt ist nicht verfügbar |
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SPA20N60C3 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 600V 20.7A TO220-111 Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 13.1A, 10V Power Dissipation (Max): 34.5W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 1mA Supplier Device Package: PG-TO220-3-111 Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V |
Produkt ist nicht verfügbar |