SPA20N60CFD Infineon Technologies

Description: POWER FIELD-EFFECT TRANSISTOR, 2, Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: PG-TO220-3-313, Vgs(th) (Max) @ Id: 5V @ 1mA, Power Dissipation (Max): 35W (Tc), Rds On (Max) @ Id, Vgs: 220mOhm @ 13.1A, 10V, Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Bulk.