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SPB02N60C3ATMA1 ROCHESTER ELECTRONICS


SPB02N60C3_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42e153f494d Hersteller: ROCHESTER ELECTRONICS
Description: ROCHESTER ELECTRONICS - SPB02N60C3ATMA1 - SPB02N60 600V COOLMOS N-CHANNEL POWER M
tariffCode: 85412900
euEccn: TBC
hazardous: false
productTraceability: No
usEccn: TBC
SVHC: No SVHC (27-Jun-2024)
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Technische Details SPB02N60C3ATMA1 ROCHESTER ELECTRONICS

Description: MOSFET N-CH 650V 1.8A TO263-3, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc), Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V, Power Dissipation (Max): 25W (Tc), Vgs(th) (Max) @ Id: 3.9V @ 80µA, Supplier Device Package: PG-TO263-3-2, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V.

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SPB02N60C3ATMA1 SPB02N60C3ATMA1 Hersteller : Infineon Technologies spp_b02n60c3.pdf Trans MOSFET N-CH 600V 1.8A 3-Pin(2+Tab) D2PAK T/R
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SPB02N60C3ATMA1 SPB02N60C3ATMA1 Hersteller : Infineon Technologies SPB02N60C3_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42e153f494d Description: MOSFET N-CH 650V 1.8A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 80µA
Supplier Device Package: PG-TO263-3-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH