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SPB03N60C3ATMA1

SPB03N60C3ATMA1 Infineon Technologies

SPB03N60C3_Rev.2.5.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42e517e49a0 Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 3.2A TO263-3
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 135µA
Supplier Device Package: PG-TO263-3-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
auf Bestellung 11750 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
429+1.06 EUR
Mindestbestellmenge: 429
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Technische Details SPB03N60C3ATMA1 Infineon Technologies

Description: MOSFET N-CH 650V 3.2A TO263-3, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc), Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V, Power Dissipation (Max): 38W (Tc), Vgs(th) (Max) @ Id: 3.9V @ 135µA, Supplier Device Package: PG-TO263-3-2, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V.

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SPB03N60C3ATMA1 Hersteller : ROCHESTER ELECTRONICS SPB03N60C3_Rev.2.5.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42e517e49a0 Description: ROCHESTER ELECTRONICS - SPB03N60C3ATMA1 - SPB03N60 600V COOLMOS N-CHANNEL POWER M
tariffCode: 85412900
euEccn: TBC
hazardous: false
productTraceability: No
usEccn: TBC
SVHC: No SVHC (27-Jun-2024)
auf Bestellung 2750 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
SPB03N60C3ATMA1 SPB03N60C3ATMA1 Hersteller : Infineon Technologies SPB03N60C3_Rev.2.5.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42e517e49a0 Description: MOSFET N-CH 650V 3.2A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 135µA
Supplier Device Package: PG-TO263-3-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH