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SPB04N50C3ATMA1

SPB04N50C3ATMA1 Infineon Technologies

SPB04N50C3_Rev.2.3.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42d2983481a Hersteller: Infineon Technologies
Description: MOSFET N-CH 560V 4.5A TO263-3
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 200µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 560 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
auf Bestellung 22741 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
388+1.21 EUR
Mindestbestellmenge: 388
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Technische Details SPB04N50C3ATMA1 Infineon Technologies

Description: MOSFET N-CH 560V 4.5A TO263-3, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc), Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V, Power Dissipation (Max): 50W (Tc), Vgs(th) (Max) @ Id: 3.9V @ 200µA, Supplier Device Package: PG-TO263-3-2, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 560 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V.

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SPB04N50C3ATMA1 Hersteller : ROCHESTER ELECTRONICS SPB04N50C3_Rev.2.3.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42d2983481a Description: ROCHESTER ELECTRONICS - SPB04N50C3ATMA1 - SPB04N50 500V COOLMOS N-CHANNEL POWER M
tariffCode: 85412900
euEccn: TBC
hazardous: false
productTraceability: No
usEccn: TBC
SVHC: No SVHC (27-Jun-2024)
auf Bestellung 10741 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
SPB04N50C3ATMA1 SPB04N50C3ATMA1 Hersteller : Infineon Technologies spp_b_a04n50c3.pdf Trans MOSFET N-CH 500V 4.5A 3-Pin(2+Tab) D2PAK T/R
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SPB04N50C3ATMA1 SPB04N50C3ATMA1 Hersteller : Infineon Technologies SPB04N50C3_Rev.2.3.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42d2983481a Description: MOSFET N-CH 560V 4.5A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 200µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 560 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH