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SPB100N06S2-05

SPB100N06S2-05 Infineon Technologies

SP%28B%2CP%29100N06S2-05.pdf Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 100A TO263-3
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
185+2.71 EUR
Mindestbestellmenge: 185
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Technische Details SPB100N06S2-05 Infineon Technologies

Description: MOSFET N-CH 55V 100A TO263-3, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 4.7mOhm @ 80A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PG-TO263-3-2, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V.

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SPB100N06S2-05 Hersteller : INFINEON SP%28B%2CP%29100N06S2-05.pdf 07+ TO-263/D2-PAK
auf Bestellung 30000 Stücke:
Lieferzeit 21-28 Tag (e)
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SPB100N06S2-05 Hersteller : INFINEON SP%28B%2CP%29100N06S2-05.pdf TO-263/D2-PAK
auf Bestellung 30000 Stücke:
Lieferzeit 21-28 Tag (e)
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SPB100N06S2-05 Hersteller : ROCHESTER ELECTRONICS SP%28B%2CP%29100N06S2-05.pdf Description: ROCHESTER ELECTRONICS - SPB100N06S2-05 - SPB100N06 OPTLMOS, 100A, 55V, 0.0047OHM
tariffCode: 85412900
euEccn: TBC
hazardous: false
productTraceability: No
usEccn: TBC
SVHC: No SVHC (27-Jun-2024)
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
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SPB100N06S2-05 SPB100N06S2-05 Hersteller : Infineon Technologies SP%28B%2CP%29100N06S2-05.pdf Description: MOSFET N-CH 55V 100A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V
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SPB100N06S2-05 SPB100N06S2-05 Hersteller : Infineon Technologies SP%28B%2CP%29100N06S2-05.pdf MOSFET
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SPB100N06S205 SPB100N06S205 Hersteller : Infineon Technologies MOSFET MOSFET
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