Produkte > INFINEON > SPB42N03S2L-13

SPB42N03S2L-13 INFINEON


SPP_B_42N03S2L-13_040604.pdf Hersteller: INFINEON
07+ TO-263/D2-PAK
auf Bestellung 30000 Stücke:

Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details SPB42N03S2L-13 INFINEON

Description: MOSFET N-CH 30V 42A TO263-3, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 42A (Tc), Rds On (Max) @ Id, Vgs: 12.6mOhm @ 21A, 10V, Power Dissipation (Max): 83W (Tc), Vgs(th) (Max) @ Id: 2V @ 37µA, Supplier Device Package: PG-TO263-3-2, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 30.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1130 pF @ 25 V.

Weitere Produktangebote SPB42N03S2L-13

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
SPB42N03S2L-13 Hersteller : INFINEON SPP_B_42N03S2L-13_040604.pdf TO-263/D2-PAK
auf Bestellung 30000 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
SPB42N03S2L-13 SPB42N03S2L-13 Hersteller : Infineon Technologies SPP_B_42N03S2L-13_040604.pdf Description: MOSFET N-CH 30V 42A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 21A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2V @ 37µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1130 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SPB42N03S2L-13 SPB42N03S2L-13 Hersteller : Infineon Technologies SPP_B_42N03S2L-13_040604.pdf Description: MOSFET N-CH 30V 42A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 21A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2V @ 37µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1130 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH