SPB80P06PGATMA1 Infineon Technologies

Description: MOSFET P-CH 60V 80A TO263-3, Qualification: AEC-Q101, Grade: Automotive, Vgs(th) (Max) @ Id: 4V @ 5.5mA, Power Dissipation (Max): 340W (Tc), Rds On (Max) @ Id, Vgs: 23mOhm @ 64A, 10V, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 5033 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 173 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: PG-TO263-3-2.