SPD03N50C3ATMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET N-CH 500V 3.2A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 135µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
auf Bestellung 14975 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 469+ | 1.05 EUR |
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Technische Details SPD03N50C3ATMA1 Infineon Technologies
Description: MOSFET N-CH 500V 3.2A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc), Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V, Power Dissipation (Max): 38W (Tc), Vgs(th) (Max) @ Id: 3.9V @ 135µA, Supplier Device Package: PG-TO252-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V.
Weitere Produktangebote SPD03N50C3ATMA1 nach Preis ab 0.92 EUR bis 1.20 EUR
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SPD03N50C3ATMA1 | Hersteller : Infineon Technologies |
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SPD03N50C3ATMA1 | Hersteller : ROCHESTER ELECTRONICS |
Description: ROCHESTER ELECTRONICS - SPD03N50C3ATMA1 - SPD03N50 500V COOLMOS N-CHANNEL POWER M tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 14975 Stücke: Lieferzeit 14-21 Tag (e) |
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Trans MOSFET N-CH 500V 3.2A 3-Pin(2+Tab) DPAK T/R |
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| SPD03N50C3ATMA1 | Hersteller : INFINEON TECHNOLOGIES |
SPD03N50C3ATMA1 SMD N channel transistors |
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SPD03N50C3ATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 500V 3.2A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V Power Dissipation (Max): 38W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 135µA Supplier Device Package: PG-TO252-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V |
Produkt ist nicht verfügbar |
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SPD03N50C3ATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 500V 3.2A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V Power Dissipation (Max): 38W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 135µA Supplier Device Package: PG-TO252-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V |
Produkt ist nicht verfügbar |