SPD03N60C3

SPD03N60C3 Infineon Technologies


Infineon-SPD03N60C3-DS-v02_06-NA.pdf?fileId=db3a3043191a246301192907f3b27f4b Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 3.2A TO252
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 135µA
Supplier Device Package: PG-TO252-3-313
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Produkt ist nicht verfügbar

Produktrezensionen
Produktbewertung abgeben

Technische Details SPD03N60C3 Infineon Technologies

Description: MOSFET N-CH 600V 3.2A TO252, Packaging: Bulk, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc), Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V, Power Dissipation (Max): 38W (Tc), Vgs(th) (Max) @ Id: 3.9V @ 135µA, Supplier Device Package: PG-TO252-3-313, Part Status: Active, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V.

Weitere Produktangebote SPD03N60C3

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
SPD03N60C3 SPD03N60C3 Hersteller : Infineon Technologies Infineon-SPD03N60C3-DataSheet-v02_07-EN-958038.pdf MOSFET N-Ch 600V 3.2A DPAK-2 CoolMOS C3
Produkt ist nicht verfügbar