Technische Details SPD04N50C3 Infineon Technologies
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 560V; 4.5A; 42W; PG-TO252-3, Type of transistor: N-MOSFET, On-state resistance: 0.95Ω, Mounting: SMD, Power dissipation: 42W, Polarisation: unipolar, Technology: CoolMOS™, Drain current: 4.5A, Kind of channel: enhancement, Drain-source voltage: 560V, Gate-source voltage: ±20V, Case: PG-TO252-3.
Weitere Produktangebote SPD04N50C3
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
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SPD04N50C3 | INFINEON TECHNOLOGIES |
  Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 560V; 4.5A; 42W; PG-TO252-3 Type of transistor: N-MOSFET On-state resistance: 0.95Ω Mounting: SMD Power dissipation: 42W Polarisation: unipolar Technology: CoolMOS™ Drain current: 4.5A Kind of channel: enhancement Drain-source voltage: 560V Gate-source voltage: ±20V Case: PG-TO252-3 |
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| SPD04N50C3 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 560V; 4.5A; 42W; PG-TO252-3
Type of transistor: N-MOSFET
On-state resistance: 0.95Ω
Mounting: SMD
Power dissipation: 42W
Polarisation: unipolar
Technology: CoolMOS™
Drain current: 4.5A
Kind of channel: enhancement
Drain-source voltage: 560V
Gate-source voltage: ±20V
Case: PG-TO252-3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 560V; 4.5A; 42W; PG-TO252-3
Type of transistor: N-MOSFET
On-state resistance: 0.95Ω
Mounting: SMD
Power dissipation: 42W
Polarisation: unipolar
Technology: CoolMOS™
Drain current: 4.5A
Kind of channel: enhancement
Drain-source voltage: 560V
Gate-source voltage: ±20V
Case: PG-TO252-3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH