SPD04N50C3ATMA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET N-CH 500V 4.5A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 3.9V @ 200µA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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Technische Details SPD04N50C3ATMA1 Infineon Technologies
Description: MOSFET N-CH 500V 4.5A TO252-3, Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Drain to Source Voltage (Vdss): 500 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Not For New Designs, Supplier Device Package: PG-TO252-3, Vgs(th) (Max) @ Id: 3.9V @ 200µA, Power Dissipation (Max): 50W (Tc), Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V, Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Weitere Produktangebote SPD04N50C3ATMA1 nach Preis ab 1.01 EUR bis 2.9 EUR
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SPD04N50C3ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 500V 4.5A TO252-3 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Not For New Designs Supplier Device Package: PG-TO252-3 Vgs(th) (Max) @ Id: 3.9V @ 200µA Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
auf Bestellung 3515 Stücke: Lieferzeit 10-14 Tag (e) |
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SPD04N50C3ATMA1 | Infineon Technologies |
MOSFETs LOW POWER_LEGACY |
auf Bestellung 368 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SPD04N50C3ATMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 500V 4.5A TO252-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 3.9V @ 200µA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Description: MOSFET N-CH 500V 4.5A TO252-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 3.9V @ 200µA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
auf Bestellung 3515 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 9+ | 2.08 EUR |
| 12+ | 1.56 EUR |
| 100+ | 1.36 EUR |
| 500+ | 1.07 EUR |
| 1000+ | 1.01 EUR |
| SPD04N50C3ATMA1 |
|
Hersteller: Infineon Technologies
MOSFETs LOW POWER_LEGACY
MOSFETs LOW POWER_LEGACY
auf Bestellung 368 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 2.9 EUR |
| 10+ | 1.97 EUR |
| 100+ | 1.56 EUR |
| 500+ | 1.25 EUR |
| 1000+ | 1.12 EUR |
| 2500+ | 1.03 EUR |
| 5000+ | 1.01 EUR |