auf Bestellung 2490 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 4 EUR |
| 10+ | 2.57 EUR |
| 100+ | 1.83 EUR |
| 500+ | 1.54 EUR |
| 1000+ | 1.33 EUR |
| 2500+ | 1.22 EUR |
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Technische Details SPD06N60C3ATMA1 Infineon Technologies
Description: MOSFET N-CH 600V 6.2A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc), Rds On (Max) @ Id, Vgs: 750mOhm @ 3.9A, 10V, Power Dissipation (Max): 74W (Tc), Vgs(th) (Max) @ Id: 3.9V @ 260µA, Supplier Device Package: PG-TO252-3, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V.
Weitere Produktangebote SPD06N60C3ATMA1 nach Preis ab 0.82 EUR bis 0.82 EUR
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SPD06N60C3ATMA1 | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH 600V 6.2A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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| SPD06N60C3ATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; 600V; 6.2A; 74W; DPAK; SMT Type of transistor: N-MOSFET Technology: MOSFET Drain-source voltage: 600V Drain current: 6.2A Power dissipation: 74W Case: DPAK Gate-source voltage: 20V On-state resistance: 0.68Ω Mounting: SMD Gate charge: 31nC Kind of channel: enhancement Electrical mounting: SMT |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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| SPD06N60C3ATMA1 | Hersteller : Infineon |
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auf Bestellung 2500 Stücke: Lieferzeit 21-28 Tag (e) |
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SPD06N60C3ATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 600V 6.2A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc) Rds On (Max) @ Id, Vgs: 750mOhm @ 3.9A, 10V Power Dissipation (Max): 74W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 260µA Supplier Device Package: PG-TO252-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V |
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