auf Bestellung 2500 Stücke:
Lieferzeit 119-133 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 11+ | 5.02 EUR |
| 13+ | 4.19 EUR |
| 100+ | 3.3 EUR |
| 250+ | 3.07 EUR |
| 500+ | 2.78 EUR |
| 1000+ | 2.39 EUR |
| 2500+ | 2.27 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SPD06N60C3ATMA1 Infineon Technologies
Description: MOSFET N-CH 600V 6.2A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc), Rds On (Max) @ Id, Vgs: 750mOhm @ 3.9A, 10V, Power Dissipation (Max): 74W (Tc), Vgs(th) (Max) @ Id: 3.9V @ 260µA, Supplier Device Package: PG-TO252-3, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V.
Weitere Produktangebote SPD06N60C3ATMA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
 |
SPD06N60C3ATMA1 | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH 600V 6.2A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
|
| SPD06N60C3ATMA1 | Hersteller : Infineon |
|
auf Bestellung 2500 Stücke: Lieferzeit 21-28 Tag (e) |
||
 |
SPD06N60C3ATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 600V 6.2A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc) Rds On (Max) @ Id, Vgs: 750mOhm @ 3.9A, 10V Power Dissipation (Max): 74W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 260µA Supplier Device Package: PG-TO252-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V |
Produkt ist nicht verfügbar |