SPD07N60C3 Infineon
Hersteller: InfineonTransistor N-MOSFET; 650V; 20V; 1,46Ohm; 7,3A; 83W; -55°C ~ 150°C; SPD07N60C3ATMA1; SPD07N60C3BTMA1; SPD07N60C3 TSPD07n60c3
Anzahl je Verpackung: 10 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 20+ | 2.36 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SPD07N60C3 Infineon
Description: MOSFET N-CH 600V 7.3A TO252-3, Packaging: Bulk, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc), Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V, Power Dissipation (Max): 83W (Tc), Vgs(th) (Max) @ Id: 3.9V @ 350µA, Supplier Device Package: PG-TO252-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V.
Weitere Produktangebote SPD07N60C3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
|
SPD07N60C3 Produktcode: 130437
zu Favoriten hinzufügen
Lieblingsprodukt
|
Transistoren > MOSFET N-CH |
Produkt ist nicht verfügbar
|
|||
 |
SPD07N60C3 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 600V 7.3A TO252-3 Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 350µA Supplier Device Package: PG-TO252-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V |
Produkt ist nicht verfügbar |