SPD08P06PGBTMA1 Infineon Technologies
Hersteller: Infineon TechnologiesTrans MOSFET P-CH 60V 8.83A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R
auf Bestellung 2480 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 372+ | 0.40 EUR |
| 374+ | 0.38 EUR |
| 500+ | 0.32 EUR |
| 1000+ | 0.26 EUR |
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Technische Details SPD08P06PGBTMA1 Infineon Technologies
Description: MOSFET P-CH 60V 8.83A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 8.83A (Ta), Rds On (Max) @ Id, Vgs: 300mOhm @ 10A, 6.2V, Power Dissipation (Max): 42W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PG-TO252-3, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6.2V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote SPD08P06PGBTMA1 nach Preis ab 0.26 EUR bis 1.41 EUR
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SPD08P06PGBTMA1 | Hersteller : Infineon Technologies |
Trans MOSFET P-CH 60V 8.83A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 42500 Stücke: Lieferzeit 14-21 Tag (e) |
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SPD08P06PGBTMA1 | Hersteller : Infineon Technologies |
Trans MOSFET P-CH 60V 8.83A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 42500 Stücke: Lieferzeit 14-21 Tag (e) |
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SPD08P06PGBTMA1 | Hersteller : Infineon Technologies |
Description: MOSFET P-CH 60V 8.83A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8.83A (Ta) Rds On (Max) @ Id, Vgs: 300mOhm @ 10A, 6.2V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PG-TO252-3 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6.2V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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SPD08P06PGBTMA1 | Hersteller : Infineon Technologies |
Trans MOSFET P-CH 60V 8.83A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 1452 Stücke: Lieferzeit 14-21 Tag (e) |
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SPD08P06PGBTMA1 | Hersteller : Infineon Technologies |
Trans MOSFET P-CH 60V 8.83A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 1452 Stücke: Lieferzeit 14-21 Tag (e) |
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SPD08P06PGBTMA1 | Hersteller : Infineon Technologies |
Trans MOSFET P-CH 60V 8.83A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 4976 Stücke: Lieferzeit 14-21 Tag (e) |
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SPD08P06PGBTMA1 | Hersteller : Infineon Technologies |
MOSFETs P-Ch -60V -8.8A DPAK-2 |
auf Bestellung 99378 Stücke: Lieferzeit 10-14 Tag (e) |
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SPD08P06PGBTMA1 | Hersteller : Infineon Technologies |
Description: MOSFET P-CH 60V 8.83A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8.83A (Ta) Rds On (Max) @ Id, Vgs: 300mOhm @ 10A, 6.2V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PG-TO252-3 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6.2V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 7478 Stücke: Lieferzeit 10-14 Tag (e) |
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SPD08P06PGBTMA1 | Hersteller : INFINEON |
Description: INFINEON - SPD08P06PGBTMA1 - Leistungs-MOSFET, p-Kanal, 60 V, 8.83 A, 0.23 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 8.83A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 42W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 6.2V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.23ohm SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 41815 Stücke: Lieferzeit 14-21 Tag (e) |
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SPD08P06PGBTMA1 | Hersteller : Infineon Technologies |
Trans MOSFET P-CH 60V 8.83A Automotive 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 20000 Stücke: Lieferzeit 14-21 Tag (e) |
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SPD08P06PGBTMA1 | Hersteller : Infineon Technologies |
Trans MOSFET P-CH 60V 8.83A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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SPD08P06PGBTMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -8.8A; 42W; PG-TO252-3 Type of transistor: P-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: -60V Drain current: -8.8A Power dissipation: 42W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 0.3Ω Mounting: SMD Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
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SPD08P06PGBTMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -8.8A; 42W; PG-TO252-3 Type of transistor: P-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: -60V Drain current: -8.8A Power dissipation: 42W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 0.3Ω Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |