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SPD30N03S2L07GBTMA1

SPD30N03S2L07GBTMA1 Infineon Technologies


spd30n03s2l-07 rev 1.2.pdf Hersteller: Infineon Technologies
Trans MOSFET N-CH 30V 30A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 1757 Stücke:

Lieferzeit 14-21 Tag (e)
Anzahl Preis
572+0.97 EUR
1000+0.88 EUR
Mindestbestellmenge: 572
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Technische Details SPD30N03S2L07GBTMA1 Infineon Technologies

Description: MOSFET N-CH 30V 30A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 6.7mOhm @ 30A, 10V, Power Dissipation (Max): 136W (Tc), Vgs(th) (Max) @ Id: 2V @ 85µA, Supplier Device Package: PG-TO252-3, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 25 V.

Weitere Produktangebote SPD30N03S2L07GBTMA1 nach Preis ab 0.88 EUR bis 1.02 EUR

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SPD30N03S2L07GBTMA1 SPD30N03S2L07GBTMA1 Hersteller : Infineon Technologies spd30n03s2l-07 rev 1.2.pdf Trans MOSFET N-CH 30V 30A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 7500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
572+0.97 EUR
1000+0.88 EUR
Mindestbestellmenge: 572
Im Einkaufswagen  Stück im Wert von  UAH
SPD30N03S2L07GBTMA1 SPD30N03S2L07GBTMA1 Hersteller : Infineon Technologies SPD30N03S2L-07_G.pdf Description: MOSFET N-CH 30V 30A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 30A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2V @ 85µA
Supplier Device Package: PG-TO252-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 25 V
auf Bestellung 1757 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
495+1.02 EUR
Mindestbestellmenge: 495
Im Einkaufswagen  Stück im Wert von  UAH
SPD30N03S2L07GBTMA1 Hersteller : ROCHESTER ELECTRONICS SPD30N03S2L-07_G.pdf Description: ROCHESTER ELECTRONICS - SPD30N03S2L07GBTMA1 - SPD30N03 - OPTLMOS, 30A, 30V, 0.0098OHM,
tariffCode: 85412900
euEccn: TBC
hazardous: false
productTraceability: No
usEccn: TBC
SVHC: No SVHC (27-Jun-2024)
auf Bestellung 1757 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
SPD30N03S2L07GBTMA1 SPD30N03S2L07GBTMA1 Hersteller : Infineon Technologies SPD30N03S2L-07_G.pdf Description: MOSFET N-CH 30V 30A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 30A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2V @ 85µA
Supplier Device Package: PG-TO252-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 25 V
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