SPD30N03S2L20GBTMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET N-CH 30V 30A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 18A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 2V @ 23µA
Supplier Device Package: PG-TO252-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
auf Bestellung 22023 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 616+ | 0.74 EUR |
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Technische Details SPD30N03S2L20GBTMA1 Infineon Technologies
Description: MOSFET N-CH 30V 30A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 20mOhm @ 18A, 10V, Power Dissipation (Max): 60W (Tc), Vgs(th) (Max) @ Id: 2V @ 23µA, Supplier Device Package: PG-TO252-3, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V.
Weitere Produktangebote SPD30N03S2L20GBTMA1 nach Preis ab 0.48 EUR bis 0.63 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SPD30N03S2L20GBTMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 30V 30A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 20000 Stücke: Lieferzeit 14-21 Tag (e) |
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| SPD30N03S2L20GBTMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 30V 30A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 6344 Stücke: Lieferzeit 14-21 Tag (e) |
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| SPD30N03S2L20GBTMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 30V 30A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 2023 Stücke: Lieferzeit 14-21 Tag (e) |
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| SPD30N03S2L20GBTMA1 | Hersteller : ROCHESTER ELECTRONICS |
Description: ROCHESTER ELECTRONICS - SPD30N03S2L20GBTMA1 - SPD30N03 OPTLMOS, 30A, 30V, 0.031OHM, N tariffCode: 85412900 euEccn: TBC hazardous: false productTraceability: No usEccn: TBC SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 20000 Stücke: Lieferzeit 14-21 Tag (e) |
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SPD30N03S2L20GBTMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 30V 30A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 18A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 2V @ 23µA Supplier Device Package: PG-TO252-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V |
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