SPI35N10 Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 35A TO262-3
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO262-3-1
Vgs(th) (Max) @ Id: 4V @ 83µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 26.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
Produktrezensionen
Produktbewertung abgeben
Technische Details SPI35N10 Infineon Technologies
Description: MOSFET N-CH 100V 35A TO262-3, Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: PG-TO262-3-1, Vgs(th) (Max) @ Id: 4V @ 83µA, Power Dissipation (Max): 150W (Tc), Rds On (Max) @ Id, Vgs: 44mOhm @ 26.4A, 10V, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA, Packaging: Tube.