SPN02N60C3 E6433 Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 400MA SOT223-4
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-SOT223-4
Vgs(th) (Max) @ Id: 3.9V @ 80µA
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Produktrezensionen
Produktbewertung abgeben
Technische Details SPN02N60C3 E6433 Infineon Technologies
Description: MOSFET N-CH 650V 400MA SOT223-4, Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: PG-SOT223-4, Vgs(th) (Max) @ Id: 3.9V @ 80µA, Power Dissipation (Max): 1.8W (Ta), Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.1A, 10V, Current - Continuous Drain (Id) @ 25°C: 400mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-261-4, TO-261AA, Packaging: Tape & Reel (TR).