SPP06N60C3XKSA1 Infineon Technologies
auf Bestellung 3964 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 204+ | 2.4 EUR |
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Technische Details SPP06N60C3XKSA1 Infineon Technologies
Description: LOW POWER_LEGACY, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc), Rds On (Max) @ Id, Vgs: 750mOhm @ 3.9A, 10V, Power Dissipation (Max): 74W (Tc), Vgs(th) (Max) @ Id: 3.9V @ 260µA, Supplier Device Package: PG-TO220-3-1, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V.
Weitere Produktangebote SPP06N60C3XKSA1 nach Preis ab 2.56 EUR bis 2.56 EUR
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SPP06N60C3XKSA1 | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH 650V 6.2A 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 3964 Stücke: Lieferzeit 14-21 Tag (e) |
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SPP06N60C3XKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 650V 6.2A 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
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SPP06N60C3XKSA1 | Hersteller : Infineon Technologies |
Description: LOW POWER_LEGACY Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc) Rds On (Max) @ Id, Vgs: 750mOhm @ 3.9A, 10V Power Dissipation (Max): 74W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 260µA Supplier Device Package: PG-TO220-3-1 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V |
Produkt ist nicht verfügbar |
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SPP06N60C3XKSA1 | Hersteller : Infineon Technologies |
MOSFET N-Ch 650V 6.2A TO220-3 |
Produkt ist nicht verfügbar |