SPP08N80C3 Infineon Technologies
auf Bestellung 1813 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 4.03 EUR |
10+ | 3.36 EUR |
100+ | 2.68 EUR |
250+ | 2.53 EUR |
500+ | 2.15 EUR |
1000+ | 1.92 EUR |
2500+ | 1.81 EUR |
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Technische Details SPP08N80C3 Infineon Technologies
Description: SPP08N80 - 800V COOLMOS N-CHANNE, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Rds On (Max) @ Id, Vgs: 650mOhm @ 5.1A, 10V, Power Dissipation (Max): 104W (Tc), Vgs(th) (Max) @ Id: 3.9V @ 470µA, Supplier Device Package: PG-TO220-3-1, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V.
Weitere Produktangebote SPP08N80C3 nach Preis ab 5.22 EUR bis 5.22 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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SPP08N80C3 | Hersteller : Infineon |
CoolMOS 8A 800V 104W 0.65Ω SPP08N80C3 TSPP08N80C3 Anzahl je Verpackung: 10 Stücke |
auf Bestellung 48 Stücke: Lieferzeit 7-14 Tag (e) |
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SPP08N80C3 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 8A; 104W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 8A Power dissipation: 104W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.65Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SPP08N80C3 | Hersteller : Infineon Technologies |
Description: SPP08N80 - 800V COOLMOS N-CHANNE Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 650mOhm @ 5.1A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 470µA Supplier Device Package: PG-TO220-3-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V |
Produkt ist nicht verfügbar |
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SPP08N80C3 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 8A; 104W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 8A Power dissipation: 104W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.65Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |