SPP11N60C3XKSA1 Infineon Technologies
auf Bestellung 7032 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 58+ | 2.72 EUR |
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Technische Details SPP11N60C3XKSA1 Infineon Technologies
Description: MOSFET N-CH 650V 11A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V, Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 3.9V @ 500µA, Supplier Device Package: PG-TO220-3-1, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V.
Weitere Produktangebote SPP11N60C3XKSA1 nach Preis ab 1.65 EUR bis 5.44 EUR
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SPP11N60C3XKSA1 | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 7034 Stücke: Lieferzeit 14-21 Tag (e) |
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SPP11N60C3XKSA1 | Hersteller : Infineon Technologies |
MOSFET N-Ch 600V 11A TO220-3 |
auf Bestellung 264 Stücke: Lieferzeit 10-14 Tag (e) |
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SPP11N60C3XKSA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 650V 11A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 500µA Supplier Device Package: PG-TO220-3-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V |
auf Bestellung 975 Stücke: Lieferzeit 10-14 Tag (e) |
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SPP11N60C3XKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 8034 Stücke: Lieferzeit 14-21 Tag (e) |
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SPP11N60C3XKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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SPP11N60C3XKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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SPP11N60C3XKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 33A; 125W; PG-TO220 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 7A Pulsed drain current: 33A Power dissipation: 125W Case: PG-TO220 Gate-source voltage: ±20V On-state resistance: 0.38Ω Mounting: THT Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SPP11N60C3XKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 33A; 125W; PG-TO220 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 7A Pulsed drain current: 33A Power dissipation: 125W Case: PG-TO220 Gate-source voltage: ±20V On-state resistance: 0.38Ω Mounting: THT Kind of channel: enhanced |
Produkt ist nicht verfügbar |