SPP12N50C3HKSA1 Infineon Technologies

Description: MOSFET N-CH 560V 11.6A TO220-3, Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V, Drain to Source Voltage (Vdss): 560 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: PG-TO220-3-1, Vgs(th) (Max) @ Id: 3.9V @ 500µA, Power Dissipation (Max): 125W (Tc), Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V, Current - Continuous Drain (Id) @ 25°C: 11.6A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.