 
SPP12N50C3XKSA1 Infineon Technologies
 Hersteller: Infineon Technologies
                                                Hersteller: Infineon TechnologiesDescription: LOW POWER_LEGACY
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
auf Bestellung 10179 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis | 
|---|---|
| 219+ | 2.22 EUR | 
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Technische Details SPP12N50C3XKSA1 Infineon Technologies
Description: LOW POWER_LEGACY, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11.6A (Tc), Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V, Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 3.9V @ 500µA, Supplier Device Package: PG-TO220-3-1, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V. 
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|---|---|---|---|---|---|
| SPP12N50C3XKSA1 | Hersteller : ROCHESTER ELECTRONICS |  Description: ROCHESTER ELECTRONICS - SPP12N50C3XKSA1 - SPP12N50 500V COOLMOS N-CHANNEL POWER M euEccn: TBC hazardous: false productTraceability: Yes-Date/Lot Code usEccn: TBC SVHC: No SVHC (27-Jun-2024) | auf Bestellung 10979 Stücke:Lieferzeit 14-21 Tag (e) | ||
|   | SPP12N50C3XKSA1 | Hersteller : Infineon Technologies |  Trans MOSFET N-CH 500V 11.6A 3-Pin(3+Tab) TO-220AB Tube | Produkt ist nicht verfügbar | |
|   | SPP12N50C3XKSA1 | Hersteller : Infineon Technologies |  Description: LOW POWER_LEGACY Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.6A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 500µA Supplier Device Package: PG-TO220-3-1 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V | Produkt ist nicht verfügbar | |
|   | SPP12N50C3XKSA1 | Hersteller : Infineon Technologies |  MOSFET N-Ch 560V 11.6A TO220-3 | Produkt ist nicht verfügbar |