SPP18P06PHXKSA1 INFINEON TECHNOLOGIES
Hersteller: INFINEON TECHNOLOGIESCategory: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -18.7A; 81.1W; PG-TO220-3
Mounting: THT
Type of transistor: P-MOSFET
On-state resistance: 0.13Ω
Drain current: -18.7A
Drain-source voltage: -60V
Case: PG-TO220-3
Technology: SIPMOS™
Kind of channel: enhanced
Polarisation: unipolar
Gate-source voltage: ±20V
Power dissipation: 81.1W
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 53 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 41+ | 1.77 EUR |
| 46+ | 1.59 EUR |
| 50+ | 1.43 EUR |
| 53+ | 1.34 EUR |
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Technische Details SPP18P06PHXKSA1 INFINEON TECHNOLOGIES
Description: MOSFET P-CH 60V 18.7A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 18.7A (Ta), Rds On (Max) @ Id, Vgs: 130mOhm @ 13.2A, 10V, Power Dissipation (Max): 81.1W (Ta), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: PG-TO220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V.
Weitere Produktangebote SPP18P06PHXKSA1 nach Preis ab 1.34 EUR bis 2.48 EUR
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SPP18P06PHXKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -18.7A; 81.1W; PG-TO220-3 Mounting: THT Type of transistor: P-MOSFET On-state resistance: 0.13Ω Drain current: -18.7A Drain-source voltage: -60V Case: PG-TO220-3 Technology: SIPMOS™ Kind of channel: enhanced Polarisation: unipolar Gate-source voltage: ±20V Power dissipation: 81.1W Kind of package: tube |
auf Bestellung 53 Stücke: Lieferzeit 14-21 Tag (e) |
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SPP18P06PHXKSA1 | Hersteller : Infineon Technologies |
Description: MOSFET P-CH 60V 18.7A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 18.7A (Ta) Rds On (Max) @ Id, Vgs: 130mOhm @ 13.2A, 10V Power Dissipation (Max): 81.1W (Ta) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: PG-TO220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V |
auf Bestellung 505 Stücke: Lieferzeit 10-14 Tag (e) |
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SPP18P06PHXKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET P-CH 60V 18.7A Automotive 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 1936 Stücke: Lieferzeit 14-21 Tag (e) |
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| SPP18P06PHXKSA1 | Hersteller : Infineon |
P-MOSFET 18.7A 60V 81.1W 0.13Ω SPP18P06P TSPP18p06p Anzahl je Verpackung: 10 Stücke |
auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
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