SPP18P06PHXKSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET P-CH 60V 18.7A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18.7A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 13.2A, 10V
Power Dissipation (Max): 81.1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-TO220-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Qualification: AEC-Q101
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.19 EUR |
| 50+ | 2.03 EUR |
| 100+ | 1.82 EUR |
| 500+ | 1.45 EUR |
| 1000+ | 1.33 EUR |
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Lieferzeit:
10-14 Tag (e)
Mindestmenge:
5 Stücke
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Technische Details SPP18P06PHXKSA1 Infineon Technologies
Description: MOSFET P-CH 60V 18.7A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 18.7A (Ta), Rds On (Max) @ Id, Vgs: 130mOhm @ 13.2A, 10V, Power Dissipation (Max): 81.1W (Ta), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: PG-TO220-3, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote SPP18P06PHXKSA1
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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SPP18P06PHXKSA1 | INFINEON TECHNOLOGIES |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -18.7A; 81.1W; PG-TO220-3 Type of transistor: P-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: -60V Drain current: -18.7A Power dissipation: 81.1W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.13Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 455 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SPP18P06PHXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -18.7A; 81.1W; PG-TO220-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -18.7A
Power dissipation: 81.1W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -18.7A; 81.1W; PG-TO220-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -18.7A
Power dissipation: 81.1W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 455 Stücke:
Lieferzeit 14-21 Tag (e)